SemiQ Inc, a developer of SiC devices has announced a family of 1700 V SiC MOSFETs designed to meet the needs of ...

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Thorlabs has acquired Praevium Research, a developer of high-speed tuneable VCSELs. The two organisations have been working ...

Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

Engineers from Eindhoven University of Technology are claiming to have set a new benchmark for the performance of InP ...

Building on recent achievements at an emission wavelength of 450 nm, Swiss company Exalos has announced narrow-linewidth DFB ...

This design enables a narrow linewidth (typically 20 MHz at 450 nm) and wavelength precision. Additionally, the lasers ...

Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

The Vermont Gallium Nitride (V-GaN) Tech Hub — a consortium led by the University of Vermont (UVM) and including ...

Electrical measurements on these diodes revealed that increasing their temperature from ambient to 573K produces a fall in ...

The bilateral funding from Innovate UK and Innosuisse will support the two-year QDHIGHSWIR research project into overcoming ...

Fraunhofer ISE and partners have developed a SiC-based medium voltage system technology for fast charging stations that will ...