Abstract: In this work, we investigate the degradation behavior of gate injection transistor (GIT) GaN-based high-electron-mobility transistors (HEMTs) under gate overdrive stress and the evolution of ...
We can now detect single electrons with the resolution of a few trillionths of a second, and this could prove essential for building a new generation of quantum electronic devices. Traditional ...
Department of Chemistry, Faculty of Science, Hokkaido University, Kita 10, Nishi 8, Kita-ku, Sapporo, Hokkaido 060-0810, Japan Institute for Chemical Reaction Design and Discovery (WPI-ICReDD), ...
James is a published author with multiple pop-history and science books to his name. He specializes in history, space, strange science, and anything out of the ordinary.View full profile James is a ...
The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.jctc.4c01745. Connection between the exchange-correlation hole and the ...
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