Abstract: In this work, we investigate the degradation behavior of gate injection transistor (GIT) GaN-based high-electron-mobility transistors (HEMTs) under gate overdrive stress and the evolution of ...
Department of Chemistry, National Tsing Hua University, Hsinchu 30013, Taiwan Department of Chemistry and Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua ...
We can now detect single electrons with the resolution of a few trillionths of a second, and this could prove essential for building a new generation of quantum electronic devices. Traditional ...
State Key Laboratory of Urban Water Resource and Environment, School of Ecology and Environment, Harbin Institute of Technology, Shenzhen (HITSZ), Shenzhen 518055, China ...
James is a published author with multiple pop-history and science books to his name. He specializes in history, space, strange science, and anything out of the ordinary.View full profile James is a ...
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