Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

Building on recent achievements at an emission wavelength of 450 nm, Swiss company Exalos has announced narrow-linewidth DFB ...

This design enables a narrow linewidth (typically 20 MHz at 450 nm) and wavelength precision. Additionally, the lasers ...

Fraunhofer ISE and partners have developed a SiC-based medium voltage system technology for fast charging stations that will ...

The Vermont Gallium Nitride (V-GaN) Tech Hub — a consortium led by the University of Vermont (UVM) and including ...

Onsemi says the addition SiC JFET technology will complement its existing EliteSiC power portfolio and enable the company to ...

The bilateral funding from Innovate UK and Innosuisse will support the two-year QDHIGHSWIR research project into overcoming ...

Richard Hogg, chief technical officer of UK-based company III-V Epi, is advocating using GaAs epitaxial regrowth for many ...