Transport phenomena in semiconductors, theory of the p-n junction, bipolar and unipolar devices, general analysis of the metal-semiconductor and MIS structures, CCD, MOSFET and bipolar transistors.

The critical role of mechanical stress in FinFET performance and the importance of pitch control to minimize variability and optimize device parametric targets.

Three years ago, I wrote a blog entitled “Linking Virtual Wafer Fabrication Modeling with Device-level TCAD Simulation,” in which I described the seamless connection between the SEMulator3D virtual ...

A new type of transistor that could make possible fast and low-power computing devices for energy-constrained applications such as smart sensor networks, implantable medical electronics and ...

Researchers have developed the first biocompatible internal-ion-gated organic electrochemical transistor (IGT) that is fast enough to enable real-time signal sensing and stimulation of brain signals.

Transistors are the fundamental building blocks behind today's electronic revolution, powering everything from smartphones to powerful servers by controlling the flow of electrical currents. But ...

May 11 (UPI) --Scientists have developed a new method for constructing single-atom transistors, an essential component of the next generation of super-fast, ultra-powerful computers. Using the new ...

YORKTOWN HEIGHTS, N.Y.–IBM Corp. today announced its researchers have pushed carbon nanotube technology beyond the performance of leading-edge silicon transistor prototypes by developing new device ...

Jin-Woo Han is senior scientist at NASA’s Ames Research Center in California’s Silicon Valley. Along with colleagues Meyya Meyyappan, Myeong-Lok Seol and Jungsik Kim, he has designed a nanoscale ...

Flower power: IGT-based logic gates attached to the surface of orchid petals. (Courtesy: Jennifer Gelinas/Columbia University Irving Medical Center) A new ion-driven transistor that can safely ...