In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012 [3] eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but ...
This is an excerpt from “Self on Audio,” by Douglas Self, used with permission from Newnes Publishers, a division of Elsevier. For many years I felt that the output stages of power amplifiers ...
Marki Microwave has expanded its core amplifier product portfolio with three gain block amplifiers that serve as key components for a complete RF subsystem. The ADM-8622PSM, ADM-8625PSM, and ...
SAN DIEGO--(BUSINESS WIRE)--International Microwave Symposium – Marki Microwave®, innovator in the radio frequency and microwave industry for over 30 years, today announced the expansion of its core ...
In this article, we highlight one of the most important architectural traits of new continuous-time sigma-delta (CTSD) precision ADCs: the easy to drive resistive input and reference. The key to ...
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