Many modern power MOSFETs reach low values of on-resistance at 5V even when the gate-to-source voltage is 5V. For heavy-duty power MOSFETS and, especially, IGBTs (insulated-gate bipolar transistors), ...
The Renesas RAJ2930004AGM gate driver IC drives 1200-V IGBTs and SiC MOSFETs for electric vehicle (EV) inverters, while providing 3.75-kV RMS isolation. In addition, the driver IC delivers strong ...
While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...
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