These 30V, 60V, 100V and 200V P-channel radiation-hardened MOSFETs boast of a low on-resistance and gate charge, equating to a reduction in conduction loss. Lower gate charge reduces drive power ...
A pair of N-channel power MOSFETs, the Si4368DY and Si7668DP, combine low gate-charge specifications (Qgd) with small values of on-resistance (rDS(ON)) to provide a very low Figure-of-Merit (Qgd x rDS ...
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